v rrm = 400 v - 600 v i f = 50 a features ? high surge capability do-5 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol MUR5040 (r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v silicon super fast recover y diode mur5060 (r) 600 420 ? types from 400 v to 600 v v rrm 2. reverse polarity (r): stud is anode. MUR5040 thru mur5060r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions dc blocking voltage v dc 400 v continuous forward current i f 50 a operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol MUR5040 (r) unit diode forward voltage 1.3 10 a 3ma recovery time maximum reverse recovery time t rr 75 ns 600 50 600 -55 to 150 -55 to 150 1.7 mur5060 (r) reverse current i r v f a v r = 50 v, t j = 25 c i f = 50 a, t j = 25 c t c 125 c conditions 600 t c = 25 c, t p = 8.3 ms 10 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 50 v, t j = 125 c v 3 90 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
MUR5040 thru mur5060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MUR5040 thru mur5060r do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
|
